Cu induced step bunching on a Si(111) vicinal surface studied by reflection electron microscopy

Step bunching induced by Cu adsorption on a Si(111) vicinal surface was stu died by reflection electron microscopy. A surface with a regular array of s teps changes to wide (111) terraces and step bands due to the formation of the incommensurate (IC) Cu-adsorbed structure on the Si(111) terraces. The maximum terrace width of the IC domains depends on the deposition condition s of Cu, and is wider at higher temperature and at lower deposition rate. ( 441) and (331) facets are formed on a vicinal Si(111) surface inclined towa rds the [112] direction, while no facet with definite index is noticed on a vicinal surface inclined towards the [110] direction. (C) 1999 Elsevier Sc ience B.V. All rights reserved.