Effects of hydrogen on Al/Si(111)-H Schottky interfaces

Authors
Hirose, K Saitoh, T Hanta, A Uda, M
Citation
K. Hirose et al., Effects of hydrogen on Al/Si(111)-H Schottky interfaces, SURF SCI, 435, 1999, pp. 581-584
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
435
Year of publication
1999
Pages
581 - 584
Database
ISI
SICI code
0039-6028(19990802)435:<581:EOHOAS>2.0.ZU;2-M
Abstract
Al/Si(111)-H Schottky interfaces are studied by X-ray photoelectron spectro scopy and atomic force microscopy. It is shown that all hydrogen atoms that terminated the original clean Si(111) surface still exist at the buried Al /Si(111)-H interface. It is also shown that the existence of hydrogen at th e Al/Si(111)-H Schottky interface suppresses agglomeration of the Al film a t 923 K. (C) 1999 Elsevier Science B.V, All rights reserved.