Study of the inter-band transition of the GaAs single-crystal film on SrTiO3 substrate by MBE

Authors
Chen, YD Liu, XQ Lu, W Shi, GL Shen, XC Zhao, QX Willander, M
Citation
Yd. Chen et al., Study of the inter-band transition of the GaAs single-crystal film on SrTiO3 substrate by MBE, ACT PHY C E, 48(9), 1999, pp. 1718-1722
Citations number
3
Categorie Soggetti
Physics
Journal title
WULI XUEBAO
ISSN journal
10003290 → ACNP
Volume
48
Issue
9
Year of publication
1999
Pages
1718 - 1722
Database
ISI
SICI code
1000-3290(199909)48:9<1718:SOTITO>2.0.ZU;2-W
Abstract
This paper reports the molecular beam epitaxy growth of the GaAs single cry stal film on the perovskite oxide SrTiO3 (001) substrate. The photo modulat ed reflectance spectroscopy and the photoluminescence measurement show that the energy band gap and optical property of the GaAs single crystal film o n the SrTiO3 substrate is similar to that of the GaAs bulk material and the broadening of band-to-band emission of the GaAs epitaxial film is 5 times that of the GaAs single crystal.