Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)

Citation
Jj. Si et al., Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113), ACT PHY C E, 48(9), 1999, pp. 1745-1750
Citations number
17
Categorie Soggetti
Physics
Journal title
WULI XUEBAO
ISSN journal
10003290 → ACNP
Volume
48
Issue
9
Year of publication
1999
Pages
1745 - 1750
Database
ISI
SICI code
1000-3290(199909)48:9<1745:MAPOGS>2.0.ZU;2-O
Abstract
Morphology of self-assembled GeSi quantum dot grown on Si(113) by Si molecu lar beam epitaxy has been studied by transmission electron microscopy and a tomic force microscopy. Photoluminescence from the as-grown sample and anne aled sample was studied. The results were analyzed and explained.