A representative PbWO4 sample was annealed subsequently from 640 to 1040 de
grees C in air and the optical absorption spectra were measured after each
annealing step. It was found that the intrinsic color center absortion band
peaking at 350 nm increased after annealing at lower temperature, then wit
h increasing annealing temperature it decreased continuously until it was r
emoved finally. Based on the analysis of intrinsic defects and correspondin
g charge compensation of PbWO4 crystals, the creation and transformation of
the color center were discussed. This was caused by the diffusion of oxyge
n, entering into PWO crystals during the annealing process. It was supposed
that a Pb3+ --> Pb4+ transformation probably occurred in the annealing pro
cess, it would lead to annihilation of Pb3+ centers.
The UV radiation induced color center absorptions of PWO crystals annealed
at different temperatures were measured and compared. It has been observed
that the O- hole centers as the main product of the radiation damage of PWO
crystals were produced predominantly from the transformation of the intrin
sic Pb3+ hole centers. On the other hand, oxygen vacancies V-O as electron
trap centers trapped the electrons during irradiatiion, thus stabilizing O-
hole centers. When those two factors have been removed by means of anneali
ng at high temperature in air (oxygen abundant atmosphere), the radiation h
ardness of PWO crystals can be effectively improved. While, the iron impuri
ty in crystals is very harmful for the radiation hardness of PWO crystals.