A study on radiation damage mechanism in PbWO4 scintillating crystals

Citation
Xq. Feng et al., A study on radiation damage mechanism in PbWO4 scintillating crystals, ACT PHY C E, 48(7), 1999, pp. 1282-1291
Citations number
16
Categorie Soggetti
Physics
Journal title
WULI XUEBAO
ISSN journal
10003290 → ACNP
Volume
48
Issue
7
Year of publication
1999
Pages
1282 - 1291
Database
ISI
SICI code
1000-3290(199907)48:7<1282:ASORDM>2.0.ZU;2-#
Abstract
A representative PbWO4 sample was annealed subsequently from 640 to 1040 de grees C in air and the optical absorption spectra were measured after each annealing step. It was found that the intrinsic color center absortion band peaking at 350 nm increased after annealing at lower temperature, then wit h increasing annealing temperature it decreased continuously until it was r emoved finally. Based on the analysis of intrinsic defects and correspondin g charge compensation of PbWO4 crystals, the creation and transformation of the color center were discussed. This was caused by the diffusion of oxyge n, entering into PWO crystals during the annealing process. It was supposed that a Pb3+ --> Pb4+ transformation probably occurred in the annealing pro cess, it would lead to annihilation of Pb3+ centers. The UV radiation induced color center absorptions of PWO crystals annealed at different temperatures were measured and compared. It has been observed that the O- hole centers as the main product of the radiation damage of PWO crystals were produced predominantly from the transformation of the intrin sic Pb3+ hole centers. On the other hand, oxygen vacancies V-O as electron trap centers trapped the electrons during irradiatiion, thus stabilizing O- hole centers. When those two factors have been removed by means of anneali ng at high temperature in air (oxygen abundant atmosphere), the radiation h ardness of PWO crystals can be effectively improved. While, the iron impuri ty in crystals is very harmful for the radiation hardness of PWO crystals.