Study of the microstructure of alternating C3N4 in CNx/TiN composite filmsprepared

We prepared alternating CNx/TiN composite films using a de magnetron sputte ring system in which a closed unbalanced magnetic field was adopted and a n egatively biased grating was placed in front of each substrate. The composi tion of the thin film was analyzed by X-ray photoelectron spectroscopy (XPS ). X-ray diffraction (XRD) and transmission electron diffraction (TED) reve aled that the CN, films deposited at grating voltages lower than 400V are a morphous. beta-C3N4 and cubic-C3N4(c-C3N4) were formed at higher voltages. A high grating voltage is indispensable for synthesis of c-C3N4 The lattice constants of C3N4 evaluated from the experimental data agree well with rep orted theoretical values.