The study of epitaxial growth ZnO thin film on a (01(1)over-bar2) sapphiresubstrate using ECR plasma sputtering method

Epitaxial growth of ZnO film on sapphire substrate has important applicatio ns in surface acoustic wave and acousto-optical transducers. An epitaxial Z nO film has been grown on a (0112) sapphire substrate using ECR plasma sput tering method at a substrate temperature of 380 degrees C -The film is colo urless, transparent and surface smooth. In order to explore the relationshi p between the deposition parameter and crystal structure of ZnO film, it ha ve been studied that epitaxied growth of ZnO film in different substrate te mperatures and deposition rates by XRD method.