Research of electron resonant tunneling and light emission properties of double-barrier tunner junction

The Cu-Al2O3-MgF2-Au double-barrier tunnel junction has been fabricated. In this structure the electron resonant tunneling occur when a bias voltage i s applied because of the existence of a series of separated energy levels i n the barrier. Together with the analysis of I-V characteristics of the jun ction, the light emission properties have been discussed in detail. It show s that the light emission efficency, light emission stability etc, have bee n improved greatly. The light emission spectrum shifts towards short wavele ngth region as compared with that of the single-barrier metal/insulator/met al junction.