Epitaxial growth of La0.5Sr0.5CoO3 thin films and its mechanisms

Citation
My. Li et al., Epitaxial growth of La0.5Sr0.5CoO3 thin films and its mechanisms, ACT PHY C E, 48(1), 1999, pp. 114-120
Citations number
12
Categorie Soggetti
Physics
Journal title
WULI XUEBAO
ISSN journal
10003290 → ACNP
Volume
48
Issue
1
Year of publication
1999
Pages
114 - 120
Database
ISI
SICI code
1000-3290(199901)48:1<114:EGOLTF>2.0.ZU;2-3
Abstract
The structures and the epitaxial growth behavior of the La0.5Sr0.5CoO3 thin films prepared by pulsed laser deposition on various substrates and at dif ferent deposition temperatures have been studied systematically. Epitaxial growth of the LSCO thin films with low resistivity and metallic conducting features has been demonstrated on the substrates of LaAlO3, SrTiO3 and MgO. Studies reveal that for the epitaxial growth of LSCO thin films, 700-800 d egrees C are the optimal deposition temperatures and LaAlO3 is the optimal substrate. Emphases are laid on the discussions of the influences and the m echanisms of substrates and deposition temperatures on the epitaxial growth of the LSCO thin films.