Features of the film-growth conditions by cross-beam pulsed-laser deposition

Citation
A. Tselev et al., Features of the film-growth conditions by cross-beam pulsed-laser deposition, APPL PHYS A, 69(3), 1999, pp. 353-358
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
69
Issue
3
Year of publication
1999
Pages
353 - 358
Database
ISI
SICI code
0947-8396(199909)69:3<353:FOTFCB>2.0.ZU;2-C
Abstract
Spatial and energetic characteristics of the plasma plume by cross-beam pul sed-laser deposition (CBPLD) were investigated. Effective droplets filterin g together with high efficiency of material usage are observed by this appr oach. Time-of-flight (TOF) technique with electrostatic ion collectors (Lan gmuir probes operating in the ion-collecting mode) were applied to obtain k inetic energy distribution functions of ionized particles and to compare th e ionization degrees of the plasma by the CBPLD and by the conventional PLD . The average and maximum kinetic energies of the ions by the CBPLD are fou nd to be 2-3 times lower as compared to the conventional PLD. At the same t ime, the fraction of ionized species and highly exited neutrals (Rydberg at oms) in the CBPLD plasma is 1.5-2 times larger in comparison to the convent ional approach. Re-sputtering of the material of the growing film by fast i ons is a considerable effect in both the PLD methods by the chosen experime ntal conditions. The angular width of the directional pattern of the plasma plume by CBPLD is comparable to that typical for the conventional PLD.