EFFECT OF NEUTRON-IRRADIATION AND ANNEALING ON THE INTENSITY OF THE COPPER RELATED 1.01-EV EMISSION BAND IN N-TYPE GAAS

Authors
GLINCHUK KD PROKHOROVICH AV
Citation
Kd. Glinchuk et Av. Prokhorovich, EFFECT OF NEUTRON-IRRADIATION AND ANNEALING ON THE INTENSITY OF THE COPPER RELATED 1.01-EV EMISSION BAND IN N-TYPE GAAS, Crystal research and technology, 32(3), 1997, pp. 391-394
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
32
Issue
3
Year of publication
1997
Pages
391 - 394
Database
ISI
SICI code
0232-1300(1997)32:3<391:EONAAO>2.0.ZU;2-G
Abstract
Effect of neutron irradiation (E = 2 MeV, Phi less than or equal to 10 (15) n/cm(2)) and subsequent annealing (T less than or equal to 700 de grees C, t = 30 min) on the intensity of the copper-related peaked at hv(m) = 1.01 eV emission band in n-type GaAs (n(0) = 2 x 10(18) cm(-3) ) is studied. A strong irradiation-induced increase of the above emiss ion intensity was observed testifying about the irradiation-stimulated growth in the concentration of copper-related 1.01 eV radiative centr es (CuGaVAs pairs). A model is presented to explain this effect.