CRYSTAL DATA, ELECTRICAL-RESISTIVITY AND MOBILITY IN CU3IN5SE9 AND CU3IN5TE9 SINGLE-CRYSTALS

X-ray powder diffraction data were obtained for Cu3In5Se9 and Cu3In5Te 9 which were found to crystallize in orthorhombic and tetragonal syste ms, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35-475 K. C u3In5Se9 was identified to be n-type with a room temperature resistivi ty of 3 x 10(3) Omega.cm which decreases with increasing temperature. For T < 65 K impurity activation energy of 0.03 eV and for T > 350 K o nset of intrinsic conduction yielding a band gap energy of 0.99 eV wer e detected. The neutral impurity scattering was found to dominate at l ow temperatures, while in the high temperature region thermally activa ted mobility was observed. Cu3In5Te9 exhibits p-type conduction with a room temperature resistivity of 8.5 x 10(-3) Omega.cm decreasing shar ply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of latt ice and ionized impurity scattering mechanisms above and below 160 K, respectively.