INFLUENCE OF RAPID THERMAL-PROCESSING ON THE ORIENTATION PROPERTIES OF PBTIO3 THIN-FILM

Authors
ZHU JG XIAO DQ PENG WB LAN FH WAN DR
Citation
Jg. Zhu et al., INFLUENCE OF RAPID THERMAL-PROCESSING ON THE ORIENTATION PROPERTIES OF PBTIO3 THIN-FILM, Crystal research and technology, 32(3), 1997, pp. 449-453
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
32
Issue
3
Year of publication
1997
Pages
449 - 453
Database
ISI
SICI code
0232-1300(1997)32:3<449:IORTOT>2.0.ZU;2-2
Abstract
Rapid thermal processing (RTP) has developed in fabrication oi ferroel ectric (FE) thin films be cause it can reduce processing temperature a nd time. It also improves the properties of FE thin films compatible w ith semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room tempe rature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film can grow on amorphous or polycrystalline interfacial layer and the PT thin films a nnealed by RTP showed the prefered [110] and [100] textures.