Citation
G. Masini et al., High responsitivity near infrared Ge photodetectors integrated on Si, ELECTR LETT, 35(17), 1999, pp. 1467-1468
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
35
Issue
17
Year of publication
1999
Pages
1467 - 1468
Database
ISI
SICI code
0013-5194(19990819)35:17<1467:HRNIGP>2.0.ZU;2-0
Abstract
The authors have fabricated and tested heterojunction Ge/Si photodetectors
based on pure Ge epitaxially grown on Si (001) using a two-step UHV-CVD pro
cess followed by cyclic thermal annealing. The detectors exhibit responsivi
ties as high as 550mA/W at 1.32 mu m and 250mA/W at 1.55 mu m and response
limes shorter than 850ps.