High-power mid-IR type II quantum-well lasers grown on compliant universalsubstrate

Authors
Kuo, CH Lin, CH Thang, CH Pei, SS Zhou, YC
Citation
Ch. Kuo et al., High-power mid-IR type II quantum-well lasers grown on compliant universalsubstrate, ELECTR LETT, 35(17), 1999, pp. 1468-1469
Citations number
1
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
17
Year of publication
1999
Pages
1468 - 1469
Database
ISI
SICI code
0013-5194(19990819)35:17<1468:HMTIQL>2.0.ZU;2-A
Abstract
High-power mid-infra-red type II quantum-well lasers directly grown on comp liant universal substrate with a lasing wavelength of 3.9 mu m at SOK have been realised. A peak output power of > 320mW per facet and differential qu antum efficiency (DQE) of 7.2% are observed.