Transferred InP-based HBVs on glass substrate

Authors
Arscott, S Mounaix, P Lippens, D
Citation
S. Arscott et al., Transferred InP-based HBVs on glass substrate, ELECTR LETT, 35(17), 1999, pp. 1493-1494
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
17
Year of publication
1999
Pages
1493 - 1494
Database
ISI
SICI code
0013-5194(19990819)35:17<1493:TIHOGS>2.0.ZU;2-Q
Abstract
Transferred-substrate InP-based heterostructure barrier varactor devices ar e reported which have been fabricated on glass substrate following a novel epitaxial layer transfer technique utilising the negative photoresist SU-8. The transferred devices exhibit a leakage current of 4.5A/cm(2) at 10V, a zero-bias capacitance of 1fF/mu m(2) and a capacitance ratio of 5:1.