1.5 mu m wavelength DBR lasers consisting of 3 lambda/4-semiconductor and 3 lambda/4-groove buried with benzocyclobutene

Authors
Raj, MM Wiedmann, J Saka, Y Yasumoto, H Arai, S
Citation
Mm. Raj et al., 1.5 mu m wavelength DBR lasers consisting of 3 lambda/4-semiconductor and 3 lambda/4-groove buried with benzocyclobutene, ELECTR LETT, 35(16), 1999, pp. 1335-1337
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
16
Year of publication
1999
Pages
1335 - 1337
Database
ISI
SICI code
0013-5194(19990805)35:16<1335:1MMWDL>2.0.ZU;2-X
Abstract
1.5 mu m wavelength GaInAsP/InP lasers with high reflectivity deeply etched DBR have been realised. Benzocyclobutene (BCB) polymer was buried in DBR g rooves thus reducing the diffraction loss compared to that, obtained using air/semiconductor grooves. The reflectivity was estimated to be 90% from th e measurement of the threshold current dependence on the cavity length and the output power ratio from the front to the rear facets.