High-power (400mW) diode-pumped 2.7 mu m Er : ZBLAN fibre lasers using enhanced Er-Er cross-relaxation processes

Authors
Srinivasan, B Poppe, E Tafoya, J Jain, RK
Citation
B. Srinivasan et al., High-power (400mW) diode-pumped 2.7 mu m Er : ZBLAN fibre lasers using enhanced Er-Er cross-relaxation processes, ELECTR LETT, 35(16), 1999, pp. 1338-1340
Citations number
19
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
16
Year of publication
1999
Pages
1338 - 1340
Database
ISI
SICI code
0013-5194(19990805)35:16<1338:H(D2MM>2.0.ZU;2-M
Abstract
The authors report the use of enhanced inter-ion cross-relaxation in Er:ZBL AN fibres of double clad geometries for the realisation of high-power (400m W) diode-pumped 2.7 mu m lasers. Thr enhanced Er-Er cross-relaxation was en abled by the formation of clusters. around drawing-induced defects, even at moderate mean doping densities in such fibres. Further extension of this w ork should enable multi-Watt CW power level lasers at 2.7 mu m in the fores eeable future.