80Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

Authors
Sano, K Murata, K Otsuji, T Akeyoshi, T Shimizu, N Sano, E
Citation
K. Sano et al., 80Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode, ELECTR LETT, 35(16), 1999, pp. 1376-1377
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
16
Year of publication
1999
Pages
1376 - 1377
Database
ISI
SICI code
0013-5194(19990805)35:16<1376:8ODFCU>2.0.ZU;2-4
Abstract
An 80Gbit/s optoelectronic delayed flip-flop circuit which uses resonant tu nnelling diodes and a uni-travelling-carrier photodiode is reported. The ci rcuit design, which suppresses the effect of the AC current in the RTD pair , is the key to achieving such high-speed flip-flop operation. The monolith ically fabricated circuit successfully operates at 80Gbit/s while consuming 7.68mW, and is the fastest flip-flop circuit ever reported.