High hole lifetime (3.8 mu s) in 4H-SiC diodes with 5.5kV blocking voltage

Authors
Ivanov, PA Levinshtein, ME Irvine, KG Kordina, O Palmour, JW Rumyantsev, SL Singh, R
Citation
Pa. Ivanov et al., High hole lifetime (3.8 mu s) in 4H-SiC diodes with 5.5kV blocking voltage, ELECTR LETT, 35(16), 1999, pp. 1382-1383
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
16
Year of publication
1999
Pages
1382 - 1383
Database
ISI
SICI code
0013-5194(19990805)35:16<1382:HHL(MS>2.0.ZU;2-G
Abstract
The hole lifetime tau(p) in the n-base of 4H-SiC diodes with 5.5kV blocking voltage has been measured in the temperature range 300-550K. The tau(p) in creases monotonically in this temperature range from 0.6 to 3.8 mu s. Forwa rd current-voltage characteristics demonstrate a very high level of base mo dulation by minority carriers.