Trap effects studies in GaN MESFETs by pulsed measurements

Authors
Trassaert, S Boudart, B Gaquiere, C Theron, D Crosnier, Y Huet, F Poisson, MA
Citation
S. Trassaert et al., Trap effects studies in GaN MESFETs by pulsed measurements, ELECTR LETT, 35(16), 1999, pp. 1386-1388
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
16
Year of publication
1999
Pages
1386 - 1388
Database
ISI
SICI code
0013-5194(19990805)35:16<1386:TESIGM>2.0.ZU;2-6
Abstract
Static and pulsed measurements have been performed on GaN MESFETs. The exis tence of electrical traps associated with the surface stares has been demon strated. These traps can be activated by light or temperature. Hyper-freque ncy pulsed measurements performed at 3GHz have shown that the maximum stabl e gain increases with temperature.