Nonlinear charge transport phenomena in polycrystalline ferroelectrics-semiconductors

The model previously proposed by the authors for taking into account the po larization spatial distribution effect on the grain boundary barriers scree ning is used for description of a number of nonlinear charge transport phen omena in polycrystalline ferroelectric-semiconductors. Computer simulation has shown that this model enables adequate description of effects due to th e transport of both equilibrium (PTCR and varistor effects) and nonequilibr ium (photogalvanic and even field current effects) charge carriers.