Floating body induced pre-kink excess low-frequency noise in submicron SOICMOSFET technology

The well-known post-kink Lorentzian-like noise overshoot has been empirical ly correlated to the ac kink effect in the SOI CMOSFET in the past. This wo rk demonstrates the existence of a 1/f(2) excess noise spectrum (<100 Hz) s uperimposed upon 1/f noise in partially depleted (PD) floating body SOI CMO S when devices are biased in the pre-kink region (before the de kink onset voltage), While the impact ionization phenomenon is negligible in the pre-k ink region, the new observed pre-kink excess noise provides a new insight i nto the body voltage instability and current fluctuation in the SOI CMOSFET .