Surface micromachined solenoid on-Si and on-glass inductors for RF applications

Citation
Jb. Yoon et al., Surface micromachined solenoid on-Si and on-glass inductors for RF applications, IEEE ELEC D, 20(9), 1999, pp. 487-489
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
9
Year of publication
1999
Pages
487 - 489
Database
ISI
SICI code
0741-3106(199909)20:9<487:SMSOAO>2.0.ZU;2-B
Abstract
RF performance of surface micromachined solenoid on-chip inductors fabricat ed on a standard silicon substrate (10 Omega. cm) has been investigated and the results are compared with the same inductors on glass, The solenoid in ductor on Si with a 15-mu m thick insulating layer achieves peak quality (Q -) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH, This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass i nductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz , and spatial inductance density of 30 nH/mm(2), Both on-Si and on-glass in ductors have been modeled by lumped circuits, and the geometrical dependenc e of the inductance and Q-factor have been investigated as well.