Theoretical and experimental analysis of leakage current in InGaAsPBH lasers with p-n-p-n current blocking layers

The dependence of the leakage current in 1.3-mu m InGaAsP buried heterostru cture (BH) lasers with p-n-p-n current blocking layers on well number, mesa width, and carrier density has been analyzed using a two-dimensional devic e simulator and compared with the electroluminescence (EL) emitted from InP layers. The analysis of the minority carrier flow reveals that the electro n current flowing through the p-n-p-n current blocking layers is the domina nt component of the leakage current, The measured EL intensity has two peak s at both sides of the n-blocking layer apart from the active layer. The EL intensity decreases with increasing well number and carrier density of the p-blocking layer, and increases with increasing mesa width. These results are consistent with the simulations.