A low-variation nonlinear neuron circuit

A resistive-type neuron circuit is presented that combines nonlinear charac teristics of four MOS transistors to realize a saturating function. Despite circuit simplicity, characteristic variations are found to be small based on circuit analyses and fabrication measurements. Maximum variation between neurons within one chip is 1.3%, while worst-case chip-to-chip variation f rom 10 fabrications is 2.2%.