Molecular rectification with M vertical bar(D-sigma-A LB film)vertical barM junctions

Citation
Ac. Brady et al., Molecular rectification with M vertical bar(D-sigma-A LB film)vertical barM junctions, J MAT CHEM, 9(9), 1999, pp. 2271-2275
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS CHEMISTRY
ISSN journal
09599428 → ACNP
Volume
9
Issue
9
Year of publication
1999
Pages
2271 - 2275
Database
ISI
SICI code
0959-9428(199909)9:9<2271:MRWMVB>2.0.ZU;2-Z
Abstract
Molecular materials of the form electron donor-sigma-bridge-electron accept or (D-sigma-A) have been synthesized and incorporated into non-centrosymmet ric Langmuir-Blodgett (LB) multilayer structures. Electrical characterizati on has been performed using a metalmetal (MM) junction construction. Curren t density-voltage data demonstrate striking rectification behaviour. Comput ational modelling of the electronic structure of the material has been carr ied out using a first principles, density functional approach. Possible con duction mechanisms are discussed with reference to the results of this mode lling.