Molecular rectification with M vertical bar(D-sigma-A LB film)vertical barM junctions

Molecular materials of the form electron donor-sigma-bridge-electron accept or (D-sigma-A) have been synthesized and incorporated into non-centrosymmet ric Langmuir-Blodgett (LB) multilayer structures. Electrical characterizati on has been performed using a metalmetal (MM) junction construction. Curren t density-voltage data demonstrate striking rectification behaviour. Comput ational modelling of the electronic structure of the material has been carr ied out using a first principles, density functional approach. Possible con duction mechanisms are discussed with reference to the results of this mode lling.