Pd ion implantation in silica and alumina: chemical and physical interactions

Citation
G. Battaglin et al., Pd ion implantation in silica and alumina: chemical and physical interactions, J NON-CRYST, 253, 1999, pp. 251-260
Citations number
54
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
253
Year of publication
1999
Pages
251 - 260
Database
ISI
SICI code
0022-3093(199908)253:<251:PIIISA>2.0.ZU;2-E
Abstract
Silica glass and polycrystalline alumina slides were implanted with palladi um ions. Irradiations at 47 and 2 keV energies have been performed on silic a samples, at 2 keV energy on alumina. Different fluences have been used in the 10(16) ion cm(-2) range. Samples have been characterized by X-ray and ultraviolet photoelectron spectroscopies (UPS), transmission electron micro scopy (TEM), Rutherford backscattering spectrometry (RBS) and optical absor ption spectroscopy. In all samples, metallic palladium is present in the fo rm of clusters whose diameter depends on the local dopant concentration. Mo reover, palladium silicide compounds have been observed in the 5 x 10(16) P d+ cm(-2) implanted silica sample. The valence band of these composites has been measured. (C) 1999 Elsevier Science B.V. All rights reserved.