The semiconductor-metal transition of liquid tellurium-arsenic mixtures

Citation
H. Ikemoto et al., The semiconductor-metal transition of liquid tellurium-arsenic mixtures, J NON-CRYST, 252, 1999, pp. 458-462
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
252
Year of publication
1999
Part
2
Pages
458 - 462
Database
ISI
SICI code
0022-3093(199908)252:<458:TSTOLT>2.0.ZU;2-6
Abstract
The Hall coefficients, R-H, conductivity, sigma, and the EXAFS spectra of l iquid As-Te mixtures containing 0-40 at.% As have been measured up to 600 d egrees C. There are three regimes: I (semiconducting state), II (strong sca ttering state) and III (metallic state) in the temperature dependence of RH From EXAFS measurement it is found that the As-Te bonds break with increas ing temperature, which coincides with a rapid decrease of R-H in regime II, and consequently the network structure of liquid As-Te mixtures is transfo rmed into a chain like structure around 500 degrees C. The structural trans formation induces the transition from a semiconductor to metal. (C) 1999 El sevier Science B.V. All rights reserved.