10 nm scale electron beam lithography using a triphenylene derivative as anegative/positive tone resist

We show that the liquid crystal triphenylene derivative 2,3,6,7,10,11-hexap entyl-oxytriphenylene acts as a high-resolution electron beam resist. Using pentanol as a developer, positive behaviour was observed for electron dose s greater than similar to 300 mu C cm(-2) at 20 keV. At higher doses (>2.5 mC cm(-2)), the resist rapidly assumes negative tone behaviour. With the de veloper monochlorobenzene, only negative behaviour was observed, with a sen sitivity of similar to 2.5 mC cm(-2) at 20 keV. The resist allows relativel y facile definition of 14 nm patterns (negative tone) with a 30 keV electro n beam and without the need for any complex pre-irradiation preparation or post-irradiation processing of the resist.