Breakdown and high-energy electron vacuum emission of MIS-structures

Vacuum emission of ballistic electrons from Au-SiO2-Si structures has been investigated for oxide layers of various thicknesses d(ox) = 13-500 nm. In particular for very thick layers and high field strength approximate to 5 M V cm(-1) we measure electron energies up to 200 eV, that is 80% of the maxi mum ballistic drive energy E-ball = eU(S). In order to enable such high-ene rgy electrons to escape into vacuum very thin and deliberately non-perfect Au layers (d(Au) = 8-12 nm) should be used as a top semitransparent electro de. Obviously, no energy stabilization of emitted electrons is observed. Th is is probably caused by defect agglomeration and the forming of defect cha nnels. These defect channels should allow a nearly-ballistic electron trans port until they are 'burned-out' and 'quenched-off' in a macroscopic breakd own process. What remains is damage in the form of 'dead craters'.