Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview

Citation
Jc. Lee et al., Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview, MICROEL REL, 39(5), 1999, pp. 579-593
Citations number
31
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
5
Year of publication
1999
Pages
579 - 593
Database
ISI
SICI code
0026-2714(199905)39:5<579:MAMAFE>2.0.ZU;2-N
Abstract
Electrostatic charges can be generated everywhere. When they are discharged through semiconductor devices and integrated circuits, an event called an electrostatic discharge (ESD), failure of electronics systems using these d evices and ICs can occur. This paper first gives an overview of the ESD sou rces and models. Then the emphasis is placed on the modeling and measuremen ts of the most commonly used of these models caned the human body model (HB M). Various HBM protection circuits are examined to look at ways of prevent ing ICs from being damaged should ESD events occur. The issue of HBM measur ements is also addressed so that the rapid transient associated with this E SD model can be accurately measured and characterized. (C) 1999 Elsevier Sc ience Ltd. All rights reserved.