Jc. Lee et al., Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview, MICROEL REL, 39(5), 1999, pp. 579-593
Electrostatic charges can be generated everywhere. When they are discharged
through semiconductor devices and integrated circuits, an event called an
electrostatic discharge (ESD), failure of electronics systems using these d
evices and ICs can occur. This paper first gives an overview of the ESD sou
rces and models. Then the emphasis is placed on the modeling and measuremen
ts of the most commonly used of these models caned the human body model (HB
M). Various HBM protection circuits are examined to look at ways of prevent
ing ICs from being damaged should ESD events occur. The issue of HBM measur
ements is also addressed so that the rapid transient associated with this E
SD model can be accurately measured and characterized. (C) 1999 Elsevier Sc
ience Ltd. All rights reserved.