Local thermal probing to detect open and shorted IC interconnections

A new failure analysis technique has been developed for backside and fronts ide localization of open and shorted interconnections on ICs. This scanning optical microscopy technique lakes advantage of the interactions between I C defects and localized heating using a focused infrared laser (lambda = 13 40 nm). Images are produced by monitoring the voltage changes across a cons tant current supply used to power the IC as the laser beam is scanned acros s the sample. The method utilizes the Seebeck Effect to localize open inter connections and Thermally-Induced Voltage Alteration to detect shorts. The interaction physics describing the signal generation process and several ex amples demonstrating the localization of opens and shorts are described. op erational guidelines and limitations are also discussed. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.