Local thermal probing to detect open and shorted IC interconnections

Citation
Ei. Cole et al., Local thermal probing to detect open and shorted IC interconnections, MICROEL REL, 39(5), 1999, pp. 681-693
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
5
Year of publication
1999
Pages
681 - 693
Database
ISI
SICI code
0026-2714(199905)39:5<681:LTPTDO>2.0.ZU;2-V
Abstract
A new failure analysis technique has been developed for backside and fronts ide localization of open and shorted interconnections on ICs. This scanning optical microscopy technique lakes advantage of the interactions between I C defects and localized heating using a focused infrared laser (lambda = 13 40 nm). Images are produced by monitoring the voltage changes across a cons tant current supply used to power the IC as the laser beam is scanned acros s the sample. The method utilizes the Seebeck Effect to localize open inter connections and Thermally-Induced Voltage Alteration to detect shorts. The interaction physics describing the signal generation process and several ex amples demonstrating the localization of opens and shorts are described. op erational guidelines and limitations are also discussed. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.