Wafer level backside emission microscopy: sample preparation

Authors
Citation
Cl. Chiang, Wafer level backside emission microscopy: sample preparation, MICROEL REL, 39(5), 1999, pp. 709-714
Citations number
24
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
5
Year of publication
1999
Pages
709 - 714
Database
ISI
SICI code
0026-2714(199905)39:5<709:WLBEMS>2.0.ZU;2-N
Abstract
Emission microscopy has been widely adopted as an important tool for analyz ing integrated circuit failures from the front surface. More recently, the development of multi-level metallization, flip-chip and lead-on-chip packag e designs either eliminated or greatly restricted this inspection avenue. A n obvious alternative is to inspect from the backside of semiconductors. Ho wever, as silicon itself is a light-blocking material. thinning the back su rface becomes essential to successful backside emission microscopy (EM). Th is paper describes a thinning and polishing technique enabling a user to lo cally thin a defective die on a wafer, This local thinning and polishing al lows the wafer to retain its overall mechanical strength to survive the sub sequent microprobing while providing a viewing window for EM analysis throu gh the backside. (C) 1999 Elsevier Science Ltd. All rights reserved.