Laser-stimulated doping of silicon with magnesium

The results of experiments involving the laser-stimulated doping of silicon with magnesium following thermal diffusion are presented. It has been show n that the Nd-laser irradiation (lambda = 1.06 mu m) leads to the increase of the solubility and diffusion coefficient of magnesium in silicon. The cu rrent-voltage, capacity-voltage characteristics as well as the thermo-stimu lated current spectra of doped samples have been investigated. The rectifie d behavior of the investigated structures is observed. It is shown that the laser irradiation leads to the formation of Mg centers with E-c- 0.13 eV a nd E-c- 0.28 eV energy levels.