The results of experiments involving the laser-stimulated doping of silicon
with magnesium following thermal diffusion are presented. It has been show
n that the Nd-laser irradiation (lambda = 1.06 mu m) leads to the increase
of the solubility and diffusion coefficient of magnesium in silicon. The cu
rrent-voltage, capacity-voltage characteristics as well as the thermo-stimu
lated current spectra of doped samples have been investigated. The rectifie
d behavior of the investigated structures is observed. It is shown that the
laser irradiation leads to the formation of Mg centers with E-c- 0.13 eV a
nd E-c- 0.28 eV energy levels.