Radiation hardening of silicon detectors

Authors
Lemeilleur, F
Citation
F. Lemeilleur, Radiation hardening of silicon detectors, NUCL INST A, 434(1), 1999, pp. 82-89
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
434
Issue
1
Year of publication
1999
Pages
82 - 89
Database
ISI
SICI code
0168-9002(19990911)434:1<82:RHOSD>2.0.ZU;2-Q
Abstract
The radiation hardness of high grade silicon detectors is summarized in ter ms of an increase of the diode reverse current, evolution of the full deple tion voltage and charge collection efficiency. With the aim of improving th eir radiation tolerance, detectors have been produced from non-standard, fl oat-zone silicon containing various atomic impurities and from epitaxial si licon materials. Some recent results concerning their radiation hardness ar e presented. (C) 1999 Elsevier Science B.V. All rights reserved.