Preparation and properties of thick not intentionally doped GaInP(As)/GaAslayers

Authors
Nohavica, D Gladkov, P Zd'ansky, K
Citation
D. Nohavica et al., Preparation and properties of thick not intentionally doped GaInP(As)/GaAslayers, NUCL INST A, 434(1), 1999, pp. 164-168
Citations number
16
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
434
Issue
1
Year of publication
1999
Pages
164 - 168
Database
ISI
SICI code
0168-9002(19990911)434:1<164:PAPOTN>2.0.ZU;2-6
Abstract
We report on liquid-phase epitaxial growth of thick layers of GaInP(As), la ttice matched to GaAs. Layers with thicknesses up to 10 mu m were prepared in a multi-melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from moderate purity starting materials, show a signif icant decrease in the residual impurity level when erbium is added to the m elt. Fundamental electrical and optical properties of the layers were inves tigated. (C) 1999 Elsevier Science B.V. All rights reserved.