A numerical model for simulating axisymmetric rod growth in three-dimensional laser chemical vapor deposition

Authors
Dai, W Nassar, R Zhang, C Shabanian, S Maxwell, J
Citation
W. Dai et al., A numerical model for simulating axisymmetric rod growth in three-dimensional laser chemical vapor deposition, NUM HEAT A, 36(3), 1999, pp. 251-262
Citations number
13
Categorie Soggetti
Mechanical Engineering
Journal title
NUMERICAL HEAT TRANSFER PART A-APPLICATIONS
ISSN journal
10407782 → ACNP
Volume
36
Issue
3
Year of publication
1999
Pages
251 - 262
Database
ISI
SICI code
1040-7782(19990827)36:3<251:ANMFSA>2.0.ZU;2-P
Abstract
Laser chemical vapor deposition is an important process for free-form fabri cation of microparts. A laser beam is focused through a vacuum chamber wind ow onto a movable substrate. The laser beam induces gas in the chamber, to react at (or near) the focal spot on the substrate. As a result, solid-phas e reaction products are deposited on the substrate. In this paper, we devel op a numerical model for simulating axisymmetric rod growth by solving the coupled equations for heat flow and growth.