Carrier density dependence of magnetoresistance in Tl2Mn2-xRuxO7 pyrochlores

Citation
B. Martinez et al., Carrier density dependence of magnetoresistance in Tl2Mn2-xRuxO7 pyrochlores, PHYS REV L, 83(10), 1999, pp. 2022-2025
Citations number
20
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
10
Year of publication
1999
Pages
2022 - 2025
Database
ISI
SICI code
0031-9007(19990906)83:10<2022:CDDOMI>2.0.ZU;2-U
Abstract
The magnetotransport properties of the Tl2Mn2-xRuxO7 pyrochlore are studied . It is shown that Ru4+ substitution in the Mn4+ network provides a conveni ent way to modify the charge density in the Tl-O band without disrupting it with foreign cations. The experimental data reveal that the magnetoresista nce has a quadratic dependence on the magnetization and increases when the charge density in the Tl-O conduction band is reduced. Above the Curie temp erature, activated resistivity is found, signaling carrier localization and suggesting the existence of spin polarons. These results provide a solid s upport to recent theoretical predictions for magnetoresistance in low carri er density ferromagnets.