Citation
Na. Pikhtin et al., High-power broad-band single-mode InGaAsP/InP superluminescent diode, TECH PHYS L, 25(8), 1999, pp. 598-600
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850
→ ACNP
Volume
25
Issue
8
Year of publication
1999
Pages
598 - 600
Database
ISI
SICI code
1063-7850(199908)25:8<598:HBSISD>2.0.ZU;2-T
Abstract
An InGaAsP/InP separate-confinement double heterostructure having a broad g
ain profile was used to fabricate superluminescent diodes having high optic
al power (40 mW), a broad radiation spectrum (65 nm at half-width), and low
percent modulation (< 1%). Using a cw pump current of 150 mA, 1 mW of supe
rluminescence radiation was obtained at the exit from a single-mode optical
fiber. (C) 1999 American Institute of Physics. [S1063-7850(99)00408-5].