Electrical properties of Schottky diodes using high-resistivity CdTe crystals

Authors
Ukrainets, VO Il'chuk, GA Ukrainets, NA Rud', YV Ivanov-Omskii, VI
Citation
Vo. Ukrainets et al., Electrical properties of Schottky diodes using high-resistivity CdTe crystals, TECH PHYS L, 25(8), 1999, pp. 642-644
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
8
Year of publication
1999
Pages
642 - 644
Database
ISI
SICI code
1063-7850(199908)25:8<642:EPOSDU>2.0.ZU;2-M
Abstract
The Schottky barrier height is measured for single crystals doped with the halogens Cl, Br, and I during growth by chemical transport reactions. The m easurements are made using a modification of the F(V) function [N. V. Agrin skaya, Mater. Sci. Eng. B 16, 172 (1993)] proposed by the authors. (C) 1999 American Institute of Physics. [S1063-7850(99)01908-4].