Observation of a long-range action effect in ion-bombarded GaAs transistorstructures

Authors
Obolenskii, SV Skupov, VD Fefelov, AG
Citation
Sv. Obolenskii et al., Observation of a long-range action effect in ion-bombarded GaAs transistorstructures, TECH PHYS L, 25(8), 1999, pp. 655-656
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
8
Year of publication
1999
Pages
655 - 656
Database
ISI
SICI code
1063-7850(199908)25:8<655:OOALAE>2.0.ZU;2-L
Abstract
Changes in the carrier concentration and mobility in the active layers of S chottky-barrier field-effect transistors are observed when the structures a re bombarded with argon ions on the nonworking side of the GaAs substrate. (C) 1999 American Institute of Physics. [S1063-7850(99)02308-3].