Simulation of dielectric loss related with the motion of domain walls

Citation
Xb. Chen et al., Simulation of dielectric loss related with the motion of domain walls, ACT PHY C E, 48(8), 1999, pp. 1529-1534
Citations number
18
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
48
Issue
8
Year of publication
1999
Pages
1529 - 1534
Database
ISI
SICI code
1000-3290(199908)48:8<1529:SODLRW>2.0.ZU;2-J
Abstract
The measurement of dielectric susceptibility under various frequencies far Pb(Zr0.52Ti0.48)O-3 (PZT) ceramics shows that there exists a dielectric los s peak below and close to phase transition temperature, which is relaxation al characteristic but disagrees with Arrhenius relation. The peak arise fro m the interaction between domain walls, lattice and pinning defects. In thi s paper the behavior of the dielectric loss peak of PZT under various frequ encies is simulated by using the dynamic equation of viscous motion of doma in wails and by considering the Curie temperature dispersion in ceramics as well. The agreement between the simulatied result and experimental data is quite satisfactory. And from the parameters of simulation the viscous coef ficient of the motion of domain walls and the recovering force constant of pinning defects are calculated.