Boron retarded self-interstitial diffusion in Czochralski growth of silicon crystals and its role in oxidation-induced stacking-fault ring dynamics

The effect of boron doping on the position of the oxidation-induced stackin g-fault ring (OSF ring) during Czochralski (CZ) crystal growth is described using a comprehensive model for point defect dynamics including the role o f boron. The important interactions between boron atoms and intrinsic point defects are selected on the basis of tight-binding estimates for the energ ies of formation for boron-point defect structures. Intrinsic point defect properties used are taken from a parameterized model of point defect dynami cs for predicting OSF-ring dynamics. Entropies of formation for boron-point defect species are obtained by fitting the predictions of the model to exp erimental data for OSF-ring dynamics. The model successfully predicts OSF-r ing dynamics for a variety of doping and growth conditions. The effect of b oron on the OSF ring is caused by the retardation of point defect recombina tion at temperatures near the melting point caused by dynamic storage of se lf-interstitials in complexes with boron. (C) 1999 American Institute of Ph ysics. [S0003-6951(99)04537-4].