Domain imaging and local piezoelectric properties of the (200)-predominantSrBi2Ta2O9 thin film

Citation
Gd. Hu et al., Domain imaging and local piezoelectric properties of the (200)-predominantSrBi2Ta2O9 thin film, APPL PHYS L, 75(11), 1999, pp. 1610-1612
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
11
Year of publication
1999
Pages
1610 - 1612
Database
ISI
SICI code
0003-6951(19990913)75:11<1610:DIALPP>2.0.ZU;2-Z
Abstract
The domain structure of the (200)-predominant SrBi2Ta2O9 (SBT) thin film wa s detected by an atomic force microscope in the piezoelectric mode. It was found that the content of the grains split by single domain walls is less t han 5%. The types of domain walls formed in individual grains were identifi ed by analyzing the dependence of piezoelectric coefficient (d(33)) on the alternating current driving electric field. Several grains larger than 300 nm were found to be split by non-180 degrees domain walls. To study the swi tching properties, the (200)-predominant SBT thin film was polarized and im aged over a large area. Unswitchable grains cannot be observed both in the area polarized using +8 V and in the region polarized using -8 V. (C) 1999 American Institute of Physics. [S0003-6951(99)02637-6].