Origin of yield problems of single electron devices based on evaporated granular films

Citation
Ho. Muller et al., Origin of yield problems of single electron devices based on evaporated granular films, APPL PHYS L, 75(11), 1999, pp. 1634-1636
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
11
Year of publication
1999
Pages
1634 - 1636
Database
ISI
SICI code
0003-6951(19990913)75:11<1634:OOYPOS>2.0.ZU;2-Q
Abstract
An evaporated nanometer scale granular film provides a simple system for st udying Coulomb blockade effects. This technique has often been used during the last few decades. However with respect to potential devices, specific p roblems continue to obstruct broader application. It is virtually impossibl e to observe Coulomb blockade in one-dimensional structures, and even for w ide two-dimensional systems the yield is frustratingly low. We study these problems using a comprehensive theoretical framework that enables us to mod el both the growth aspects, and the electrical characteristics. In particul ar, we study how the morphology of the islands influences their electrical properties. Explanations for the observed behavior are put forward. (C) 199 9 American Institute of Physics. [S0003- 6951(99)02137-3].