Secondary electron emission data of cesiated oxygen free high conductivitycopper

Authors
Hopman, HJ Verhoeven, J
Citation
Hj. Hopman et J. Verhoeven, Secondary electron emission data of cesiated oxygen free high conductivitycopper, APPL SURF S, 150(1-4), 1999, pp. 1-7
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
150
Issue
1-4
Year of publication
1999
Pages
1 - 7
Database
ISI
SICI code
0169-4332(199908)150:1-4<1:SEEDOC>2.0.ZU;2-I
Abstract
Because of its relevance for negative hydrogen ion sources, the change in s econdary electron emission with the adsorption of Cs on Cu was studied. Pro perly prepared disks of oxygen free high conductivity (OFHC) copper yielded a maximum secondary electron emission delta(max) = 1.54 +/- 3%. The deposi tion of = 0.5 monolayer of Cs resulted in delta(max) = 3.40 +/- 3%. (C) 199 9 Elsevier Science B.V. All rights reserved.