The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films

Diamond films were doped by boron ion-implantation with the energy of 120 k eV. The implantation dose ranged from 10(14) to 10(17) cm(-2). After the im plantation, the diamond films were annealed at different temperatures (600- 750 degrees C) for different times (2-15 min). Scanning Electronic Microsco pe, Raman and Secondary Ion Mass-spectrum were used to investigate the effe ct of boron ion implantation and annealing on the microstructure of the dia mond films. The electrical resistivities of the diamond films were also mea sured. It was found that the best dose of boron ion-implantation into the d iamond film was around 10(16) cm(-2). The appropriate annealing temperature and time was 700 degrees C and 2-5 min, respectively. After implantation, the resistivities were reduced to 0.1 Omega cm (almost nine orders lower th an the unimplanted diamond films). These results show that boron ion implan tation can be an effective way to fabricate P-type diamond films. (C) 1999 Elsevier Science B.V. All rights reserved.