Thermal behaviour of Co/Si/W/Si multilayers under rapid thermal annealing

Citation
S. Luby et al., Thermal behaviour of Co/Si/W/Si multilayers under rapid thermal annealing, APPL SURF S, 150(1-4), 1999, pp. 178-184
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
150
Issue
1-4
Year of publication
1999
Pages
178 - 184
Database
ISI
SICI code
0169-4332(199908)150:1-4<178:TBOCMU>2.0.ZU;2-C
Abstract
The e-beam deposited multilayers (MLS) were studied under rapid thermal ann ealing (RTA) between 250 degrees C and 1000 degrees C during 39 s. MLS with five Co/Si/W/Si periods, each 13.9 nm (MLS1) and 18 nm (MLS1) were deposit ed onto oxidized Si substrates. Samples were analyzed by X-ray diffraction, hard and soft X-ray reflectivity measurements and grazing incidence X-ray diffuse scattering. The MLS period, interface roughness and its lateral and vertical correlations were obtained by simulation of the hard X-ray reflec tivity and diffuse scattering spectra. The MLS1 with thinner Co layers is m ore temperature resistant. However, its soft X-ray reflectivity is smaller. The results show that this is because of shorter lateral and vertical corr elation lengths of the interface roughness which may considerably influence the X-ray reflectivity of multilayers, (C) 1999 Elsevier Science B.V. All rights reserved.