Microstructural analysis of hard amorphous carbon films deposited with high-energy ion beams

Authors
Brusa, RS Somoza, A Huck, H Tiengo, N Karwasz, GP Zecca, A Reinoso, M Halac, EB
Citation
Rs. Brusa et al., Microstructural analysis of hard amorphous carbon films deposited with high-energy ion beams, APPL SURF S, 150(1-4), 1999, pp. 202-210
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
150
Issue
1-4
Year of publication
1999
Pages
202 - 210
Database
ISI
SICI code
0169-4332(199908)150:1-4<202:MAOHAC>2.0.ZU;2-P
Abstract
Hard amorphous carbon films produced using high-energy (ca. 30 keV) ion bea m deposition of CH3+ and CH4+ an silicon wafers, have been investigated by Positron Annihilation Spectroscopy (PAS), the results are correlated with R aman Spectroscopy and Electrical Resistivity measurements. The microstructu ral modifications of the films as a function of the annealing temperature i n the 300-600 degrees C range have been studied. The evolution of the fract ions of sp(2) and sp(3) bonds is described and related to the changes of th e open volume defect distribution and the graphitization process. (C) 1999 Elsevier Science B.V. All rights reserved.